|
Parameter |
Distinct Features of SLS
Technology |
|
Band Alignment |
n Type 11 Band Alignment |
|
Dark Current |
n Very low dark current due to: reduced Auger recombination |
|
Performance |
n Higher Performance (D*λ) due to: reduced dark current |
|
Operating Temperature |
n Higher Operating Temperatures due to: reduced dark current - Uncooled (300K), T.E. Cooled (160K, 200K, 250K) & Cryo-Cooled (77K) |
|
Minority Carrier Lifetime |
n Longer lifetime due to: reduced Auger recombination |
|
Array Speed |
n Very High Speed (100ns) |
|
Spectral Range |
n Wide Spectral Range (1-22 μm) - Single Band (SWIR:1-3 µm, MWIR:3-5 µm, LWIR: 8-12 µm, VLWIR1:10—16 µm, VLWIR2:16-22 µm) - Co-Located Dual Band and Co-Located Triple Band Layouts |
|
Array Uniformity |
n Higher array uniformity due to: GaSb-based process steps and SLS material growth |
|
Cost |
n Lower Cost due to: - higher array uniformity and array yield - elimination of cryo-cooler for SWIR, MWIR & LWIR arrays - elimination of three-stage cryo-cooler for VLWIR arrays |
|
Weight, Size & Power |
n Light weight compact system with low power consumption |